Shubra Gangopadhyay, PhD
LaPierre Chair and Joint Professor, Departments of Electrical Engineering, Biological Engineering and PhysicsOffice Location: 243 Engineering Building West
Office Phone: 573-882-4070
GangopadhyayS@missouri.edu
Research Interests
Research Description
The Gangopadhyay Research Group is an electrical engineering and materials science research facility at the University of Missouri Columbia's College of Engineering and is associated with the International Center for Nano/Micro Systems and Nanotechnology. It is dedicated to expanding the realm of science and technology through optimization of existing techniques and exploration of new dimensions of knowledge. The group's research includes discovering, integrating, and optimizing new materials, processing methods, and characterization techniques. By promoting an interdisciplinary approach, our unique and modern research facility was designed to train, educate and prepare students to join and lead the workforce in innovative solutions to scientific challenges.
Professional Background
- Obtained PhD in physics, Indian Institute of Technology, Kharagpur.
- Obtained MSc in physics, Jabalpur University, Jabalpur.
- Obtained BSc, Jabalpur University, Jabalpur.
Selected Publications
- Characterization of Porous Low-k Films Using Variable Angle Spectroscopic Ellipsometry, M .T. Othman, J.A. Lubguban, A. A. Lubguban and S. Gangopadhyay, R. D. Miller, W. Vulksen and H.-C. Kim, J. Appl. Phys. (99) 083503, 2006.
- A novel on-chip diagnosis method to detect flame velocity of nanoscale thermites, S. Bhattacharya, Y. Gao, S. Apperson, S. Subramaniam, E. Talantsev, R.V.Shende, S. Gangopadhyay, Journal of Energetic Materials, 24, pp. 1-15, 2006.
- Capacitance-vultage characterization of pulyfluorene-based metal-insulator-semiconductor diodes, M. Yun, R. Ravindran, M. Hossain, S. Gangopadhyay, U. Scherf, T. Bünnagel, F. Galbrecht, M. Arif and S. Guah, Applied Physic Letters, 89, 013506, 2006.
- Electrical characterization of pulyfluorene-based Metal-insulator-semiconductor Diodes, M. Yun, M. Arif, S. Gangopadhyay and S. Guha, 2006 Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 17-21, 2006.
- Post Treatments of Plasma-enhanced Chemical Vapor Deposited a-SiC:H Films for Low-k Dielectrics, B. Lahlouh, T. Rajagopalan, N. Biswas, J. A. Lubguban, S. Gangopadhyay J. Sun, D. Huang and S. L. Simon, Thin Sulid Films, 497, 109-114 2006.
- Studies on surface wettability of puly(dimethyl) siloxane (PDMS) and glass under oxygen plasma treatment and correlation with bond strength, S. Bhattacharya, A. Datta, J.M. Berg, S. Gangopadhyay, Journal of Micro Electro Mechanical Systems, 14(3), 590-597, 2005.